| PART |
Description |
Maker |
| AQY410EH AQY410EHA AQY410EHAX AQY410EHAZ AQY414EHA |
Normally closed DIP4-pin economic type with reinforced insulation Modem
Normally closed DIP4-pin economic type with reinforced insulation Modem
|
Panasonic Semiconductor
|
| S216SE2 |
Reinforced Insulation Type Zero Cross type SIP 4pin Triac output SSR
|
Sharp Electrionic Components
|
| MDHU102 MDHU105 MDHU114 MDHU115 |
Reinforced Insulation rated for 300VAC Working Voltage
|
Total Power Internation...
|
| MIHW2026 |
Reinforced Insulation rated for 300VAC Working Voltage
|
Total Power Internation...
|
| 1937650-7 1937650-4 |
Reinforced insulation
|
TE Connectivity Ltd
|
| PC3SH11YFZ PC3SH11YFZAF PC3SH11YIPB PC3SH11YIPBF |
VDRM : 600V, Reinforced insulation type Non-zero cross type DIP 4 pin Phototriac Coupler for triggering
1 CHANNEL TRIAC OUTPUT OPTOCOUPLER SMT, PLASTIC, DIP-4
1 CHANNEL TRIAC OUTPUT OPTOCOUPLER LEAD FREE, SMT, PLASTIC, DIP-4
|
Sharp Electrionic Components
Sharp Microelectronics of the Americas
Sharp Electronics, Corp.
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| FQI22N30 |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263
300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)
|
Fairchild Semiconductor Corporation
|
| FQI7N30 FQB7N30 FQB7N30TM |
300V N0Channel MOSFET
300V N-Channel MOSFET
300V N-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU7N30 FQD7N30 FQD7N30TF FQD7N30TM |
300V N-Channel QFET
300V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU3N30 FQD3N30 FQD3N30TF FQD3N30TM |
300V N-Channel QFET
300V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
